This is an MBE system for the growth of III-V layers. Sources include: Gallium effusion cell, Aluminium effusion cell, Arsenic valved cracker, Silicon dopant cell, Indium effusion cell, Berrylium dopant cell. A small Au sffusion cell is provided in the buffer chamber. A 12 keV RHEED system and a 200 amu RGA is available. 1000C wafer temperature and 800C in buffer chamber.
Physics, Electronic Engineering and Materials Science